Race track configuration and method for wafering silicon solar substrates

作者: Francois J. Henley , Adam Brailove

DOI:

关键词:

摘要: A system for manufacturing free-standing films from work pieces. The includes a racetrack structure being configured to transfer at least one piece and or more accelerator-based ion implanters coupled the via an end station. Each of is introduce particles having energy greater than 1 MeV implant into surface loaded in station form cleave region piece. modules perform process release film along region. Additionally, output port each module free standing detached service connected structure.

参考文章(300)
K. L. Saenger, J. P. de Souza, K. E. Fogel, J. A. Ott, A. Reznicek, C. Y. Sung, D. K. Sadana, H. Yin, Amorphization/templated recrystallization method for changing the orientation of single-crystal silicon: An alternative approach to hybrid orientation substrates Applied Physics Letters. ,vol. 87, pp. 221911- ,(2005) , 10.1063/1.2138795
JW Corbett, P Deák, C Ortiz-Rodriguez, LC Snyder, None, Embrittlement of materials: Si(H) as a model system Journal of Nuclear Materials. ,vol. 169, pp. 179- 184 ,(1989) , 10.1016/0022-3115(89)90533-3
Dov Sherman, Energy considerations in crack deflection phenomenon in single crystal silicon International Journal of Fracture. ,vol. 140, pp. 125- 140 ,(2006) , 10.1007/S10704-006-0048-9
Norio Onojima, Jun Suda, Hiroyuki Matsunami, Lattice relaxation process of AlN growth on atomically flat 6H-SiC substrate in molecular beam epitaxy Journal of Crystal Growth. ,vol. 237, pp. 1012- 1016 ,(2002) , 10.1016/S0022-0248(01)02118-2
Paul K. Chu, Shu Qin, Chung Chan, Nathan W. Cheung, Lawrence A. Larson, Plasma immersion ion implantation—a fledgling technique for semiconductor processing Materials Science & Engineering R-reports. ,vol. 17, pp. 207- 280 ,(1996) , 10.1016/S0927-796X(96)00194-5
Q.-Y. Tong, R. Scholz, U. Gösele, T.-H. Lee, L.-J. Huang, Y.-L. Chao, T. Y. Tan, A “smarter-cut” approach to low temperature silicon layer transfer Applied Physics Letters. ,vol. 72, pp. 49- 51 ,(1998) , 10.1063/1.120601
B. N. Mukashev, M. F. Tamendarov, S. Zh. Tokmoldin, V. V. Frolov, Hydrogen Implantation into Silicon. Infra‐Red Absorption Spectra and Electrical Properties Physica Status Solidi (a). ,vol. 91, pp. 509- 522 ,(1985) , 10.1002/PSSA.2210910219
S. Thomas Picraux, Paul S. Peercy, Ion Implantation of Surfaces Scientific American. ,vol. 252, pp. 102- 113 ,(1985) , 10.1038/SCIENTIFICAMERICAN0385-102