Method for forming conductive structures

作者: Stephan Grunow , Richard Paul Volant , Kevin Shawn Petrarca , Kaushik A. Kumar

DOI:

关键词:

摘要: A method of forming a conductive wire. The includes dielectric hardmask layer on layer; an electrically the trench extending through and layers into depositing liner/seed sidewalls bottom trench; filling with fill material; removing from top surface material electroplating metal onto exposed surfaces so edges are coplanar layer.

参考文章(63)
Peter Beckage, Mark Hall, John Hackenberg, Toni Van Gompel, STI stressor integration for minimal phosphoric exposure and divot-free topography ,(2006)
Yoshihisa Dotta, Toshio Kimura, Hideyuki Kurimoto, Semiconductor apparatus and production method thereof ,(2004)
Masanori Fukumoto, Hideyuki Iwata, Kazuhiro Matsuyama, Takatoshi Yasui, Mitsuo Yasuhira, Semiconductor memory device having a trench-stacked capacitor ,(1989)
Paul J. Steffan, Allen S. Yu, Electroless plated semiconductor vias and channels ,(1999)
Charles H. Dennison, Trung T. Doan, Integrated circuit contact ,(2002)