The impact of electrical contacts and contact-induced ultralow noise amplitudes in layered transistors

摘要: Electrical contacts made of conducting channels with external circuitry significantly impact electronic performances, in particular for two-dimensional semiconductors. This work presents a systematic study back-to-back Schottky to layered compound semiconducting flakes through static and dynamic electrical measurements the first demonstration barrier-dominated, p-type PbSnS2 field-effect transistors. In analysis, barrier height transistors can be modulated by applied electrostatic fields, while contact-dominated fluctuations render 1/f electric noise induce normalized amplitude order 10−9–10−8. Such an ultralow-noise amplitude, which is never observed other transistors, ascribed existence barriers. Our experimental results provide nuanced perspective advancing understanding performance limit increasing numbers layers development.