Switching mechanism in single-layer molybdenum disulfide transistors: an insight into current flow across Schottky barriers.
作者： Han Liu , Mengwei Si , Yexin Deng , Adam T. Neal , Yuchen Du
DOI: 10.1021/NN405916T
关键词: Schottky diode 、 Contact resistance 、 Field-effect transistor 、 Channel length modulation 、 Metal–semiconductor junction 、 Nanotechnology 、 Drain-induced barrier lowering 、 Short-channel effect 、 Schottky barrier 、 Optoelectronics 、 Materials science
摘要: … the Schottky barrier causes the MoS 2 transistor to … Schottky barriers in MoS 2 transistors from the device perspective by studying the contact properties in single-layer MoS 2 transistors. …
acs.org
sci-hub.se 
arxiv.org 参考文章(23)
Peide D. Ye, Adam T. Neal, Han Liu, Jiangjiang Gu, Magneto-transport in MoS2: phase coherence, spin-orbit scattering, and the hall factor. ACS Nano. ,vol. 7, pp. 7077- 7082 ,(2013) , 10.1021/NN402377G
Boris I. Yakobson, Pulickel M. Ajayan, Sidong Lei, Sina Najmaei, Wu Zhou, Jun Lou, Xiaolong Zou, Juan-Carlos Idrobo, Gang Shi, Zheng Liu, Vapor Phase Growth and Grain Boundary Structure of Molybdenum Disulfide Atomic Layers arXiv: Materials Science. ,(2013) , 10.1038/NMAT3673
Han Liu, Peide D. Ye, MoS2 Dual-Gate MOSFET with Atomic-Layer-Deposited Al2O3 as Top-Gate Dielectric arXiv: Materials Science. ,(2011) , 10.1109/LED.2012.2184520
Han Liu, Mengwei Si, Sina Najmaei, Adam T. Neal, Yuchen Du, Pulickel M. Ajayan, Jun Lou, Peide D. Ye, Statistical Study of Deep Submicron Dual-Gated Field-Effect Transistors on Monolayer Chemical Vapor Deposition Molybdenum Disulfide Films Nano Letters. ,vol. 13, pp. 2640- 2646 ,(2013) , 10.1021/NL400778Q
Han Wang, Lili Yu, Yi-Hsien Lee, Yumeng Shi, Allen Hsu, Matthew L. Chin, Lain-Jong Li, Madan Dubey, Jing Kong, Tomas Palacios, Integrated Circuits Based on Bilayer MoS2 Transistors Nano Letters. ,vol. 12, pp. 4674- 4680 ,(2012) , 10.1021/NL302015V
Saptarshi Das, Hong-Yan Chen, Ashish Verma Penumatcha, Joerg Appenzeller, High Performance Multilayer MoS2 Transistors with Scandium Contacts Nano Letters. ,vol. 13, pp. 100- 105 ,(2013) , 10.1021/NL303583V
Han Liu, Adam T. Neal, Peide D. Ye, Channel Length Scaling of MoS2 MOSFETs ACS Nano. ,vol. 6, pp. 8563- 8569 ,(2012) , 10.1021/NN303513C
S. Heinze, J. Tersoff, R. Martel, V. Derycke, J. Appenzeller, Ph. Avouris, Carbon nanotubes as schottky barrier transistors. Physical Review Letters. ,vol. 89, pp. 106801- 106801 ,(2002) , 10.1103/PHYSREVLETT.89.106801
Kin Fai Mak, Changgu Lee, James Hone, Jie Shan, Tony F. Heinz, Atomically thin MoS2: a new direct-gap semiconductor Physical Review Letters. ,vol. 105, pp. 136805- ,(2010) , 10.1103/PHYSREVLETT.105.136805
B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, A. Kis, Single-layer MoS2 transistors Nature Nanotechnology. ,vol. 6, pp. 147- 150 ,(2011) , 10.1038/NNANO.2010.279