Determination of critical parameters for design of semiconductor hyperbolic metamaterials
K.G. Eyink , H.J. Haugan , A.T. Neal , K. Mahalingam
Optical Materials 112 110576
1
2021
Pronounced quantum hall-effect on epitaxial graphene up to 70K
Tian Shen , A.T. Neal , Jiangjiang Gu , Min Xu
international semiconductor device research symposium 1 -2
2009
Development of Instrumentation and Data Acquisition Programs for Transport Neasurements in Graphene Flakes
Adam Tyler Neal
Pennsylvania State University
2009
Two-Dimensional TaSe2 Metallic Crystals: Spin-Orbit Scattering Length and Breakdown Current Density
Peide D. Ye , Adam T. Neal , Yuchen Du , Han Liu
arXiv: Mesoscale and Nanoscale Physics
53
2014
Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility
David Tománek , Peide D. Ye , Adam T. Neal , Zhen Zhu
ACS Nano 8 ( 4) 4033 -4041
5,656
2014
Size-Dependent-Transport Study of $\hbox{In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$ Gate-All-Around Nanowire MOSFETs: Impact of Quantum Confinement and Volume Inversion
Peide D. Ye , Adam T. Neal , Roy G. Gordon , Heng Wu
IEEE Electron Device Letters 33 ( 7) 967 -969
40
2012
Channel Length Scaling of MoS2 MOSFETs
Peide D. Ye , Adam T. Neal , Han Liu
arXiv: Materials Science
821
2012
Towards High‐Mobility Heteroepitaxial β‐Ga2O3 on Sapphire − Dependence on The Substrate Off‐Axis Angle
Subrina Rafique , Lu Han , Adam T. Neal , Shin Mou
Physica Status Solidi (a) 215 ( 2) 1700467
80
2018
Statistical Study of Deep Submicron Dual-Gated Field-Effect Transistors on Monolayer Chemical Vapor Deposition Molybdenum Disulfide Films
Han Liu , Mengwei Si , Sina Najmaei , Adam T. Neal
Nano Letters 13 ( 6) 2640 -2646
238
2013
Zeeman spin-splitting in the (010) β-Ga2O3 two-dimensional electron gas
Adam T. Neal , Yuewei Zhang , Said Elhamri , Siddharth Rajan
Applied Physics Letters 115 ( 26) 262103
2019
Study of defects in β-Ga2O3 by isothermal capacitance transient spectroscopy
Yu-Yao Lin , Adam T. Neal , Shin Mou , Jian V. Li
Journal of Vacuum Science & Technology B 37 ( 4) 041204
1
2019
Magneto-Transport in MoS2: Phase Coherence, Spin Orbit Scattering and the Hall Factor
Adam T. Neal , Han Liu , Jiangjiang Gu , Peide D. Ye
arXiv: Mesoscale and Nanoscale Physics
108
2013
Switching mechanism in single-layer molybdenum disulfide transistors: an insight into current flow across Schottky barriers.
Han Liu , Mengwei Si , Yexin Deng , Adam T. Neal
ACS Nano 8 ( 1) 1031 -1038
271
2014
Phosphorene: A New 2D Material with High Carrier Mobility
Han Liu , Adam T. Neal , Zhen Zhu , Zhe Luo
arXiv: Mesoscale and Nanoscale Physics
70
2014
Donors and deep acceptors in β-Ga2O3
Adam T. Neal , Shin Mou , Subrina Rafique , Hongping Zhao
Applied Physics Letters 113 ( 6) 062101
204
2018
Ambipolar phosphorene field-effect transistors with dielectric capping
Han Liu , Adam T. Neal , Peide D. Ye
device research conference 201 -202
5
2014
Metal contacts to MoS2: A two-dimensional semiconductor
Adam T Neal , Han Liu , JJ Gu , PD Ye
70th Device Research Conference 65 -66
51
2012
β-Ga2O3 defect study by steady-state capacitance spectroscopy
Shin-Sheng Huang , Roberto Lopez , Sanjoy Paul , Adam T. Neal
Japanese Journal of Applied Physics 57 ( 9) 091101
18
2018
Reduction of unintentional Si doping in β-Ga2O3 grown via plasma-assisted molecular beam epitaxy
Thaddeus J. Asel , Erich Steinbrunner , Jessica Hendricks , Adam T. Neal
Journal of Vacuum Science and Technology 38 ( 4) 043403
20
2020
MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor
George Seryogin , Fikadu Alema , Nicholas Valente , Houqiang Fu
Applied Physics Letters 117 ( 26) 262101
57
2020