MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor
作者： George Seryogin , Fikadu Alema , Nicholas Valente , Houqiang Fu , Erich Steinbrunner
DOI: 10.1063/5.0031484
关键词:
摘要: … For layers with the doping concentration in the range of high-10 17 and low-10 18 cm −3 , the RT electron mobility values were consistently more than 100 cm 2 /V s, suggesting that …
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