Vertical β-Ga2O3 field plate Schottky barrier diode from metal-organic chemical vapor deposition
作者： Fikadu Alema , Andrei Osinsky , James S. Speck , Esmat Farzana , Akhil Mauze
DOI: 10.1063/5.0047821
关键词:
摘要: Vertical β-Ga2O3 Schottky diodes from metal-organic chemical vapor deposition (MOCVD)-grown epitaxial films are reported in this paper for high-power application devices. The diode, fabricated with a field termination structure, showed low differential specific on-resistance of 0.67 mΩ cm2. Furthermore, the MOCVD-grown vertical exhibited punch-through breakdown and higher Baliga's figure-of-merit compared to those other growth methods similar drift layer thickness. This suggests that MOCVD growth, supporting high-quality epitaxy, can be promising high-performance β-Ga2O3-based
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