Akhil Mauze
机构: Graduate Student Researcher
每年引用次数
引用次数
引用: 1,269
H-指数: 17
I10-指数 : 20
出版物: 48
Plasma-Assisted Molecular Beam Epitaxy of Beta-Ga 2 O 3: Growth, Doping, and Heterostructures
Akhil Ramnath Ganapati Mauze
University of California, Santa Barbara
2021
Defect Spectroscopy of Ga2O3
Aaron Arehart , Siddharth Rajan , Hemant Ghadi , Steven Ringel
Bulletin of the American Physical Society
2020
Thermal management strategies for gallium oxide vertical trench-fin MOSFETs
Samuel Graham , Yuewei Zhang , James Speck , Jingjing Shi
Journal of Applied Physics 129 ( 8) 085301
13
2021
Sn doping of [beta]-Ga2O3 grown by plasma-assisted molecular beam epitaxy
Yuewei Zhang , James S. Speck , Akhil Mauze , Takeki Itoh
Oxide-based Materials and Devices XII 11687
2021
Crystal growth on (110) β-Ga2O3 via plasma-assisted molecular beam epitaxy
Yuewei Zhang , James S. Speck , Akhil Mauze , Takeki Itoh
Oxide-based Materials and Devices XII 11687
2021
Vertical β-Ga2O3 Schottky diodes from metal-organic chemical vapor deposition with low on-resistance and high average breakdown field
Fikadu Alema , Andrei Osinsky , James S. Speck , Esmat Farzana
Oxide-based Materials and Devices XII 11687
2021
Vertical β-Ga2O3 field plate Schottky barrier diode from metal-organic chemical vapor deposition
Fikadu Alema , Andrei Osinsky , James S. Speck , Esmat Farzana
Applied Physics Letters 118 ( 16) 162109
2021
Investigation of the Atomic and Electronic Structure of β-(Al0.2Ga0.8)2O3 Alloys by STEM-EELS
Adrian Chmielewski , Parivash Moradifar , Leixin Miao , Kleyser A. Lopez
Microscopy and Microanalysis 25 2186 -2187
1
2019
Point Defect and Their Influence on the Atomic and Electronic Structure of β-(AlxGa1-x)2O3 Alloys by STEM-EELS
Adrian Chmielewski , Sarah Deng , Parivash Moradifar , Leixin Miao
Microscopy and Microanalysis 26 622 -623
2020
n-type dopants in (001) β-Ga2O3 grown on (001) β-Ga2O3 substrates by plasma-assisted molecular beam epitaxy
Sang-Heon Han , Akhil Mauze , Elaheh Ahmadi , Tom Mates
Semiconductor Science and Technology 33 ( 4) 045001
62
2018
Influence of neutron irradiation on deep levels in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy
Esmat Farzana , Akhil Mauze , Joel B. Varley , Thomas E. Blue
APL Materials 7 ( 12) 121102
11
2019
MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature
Yuewei Zhang , Fikadu Alema , Akhil Mauze , Onur S. Koksaldi
APL Materials 7 ( 2) 022506
77
2019
Near unity ideality factor for sidewall Schottky contacts on un-intentionally doped β-Ga2O3
Yuewei Zhang , Akhil Mauze , Fikadu Alema , Andrei Osinsky
Applied Physics Express 12 ( 4) 044005
22
2019
Metal-oxide catalyzed epitaxy (MOCATAXY): the example of the O plasma-assisted molecular beam epitaxy of β-(Al x Ga 1- x ) 2 O 3 /β-Ga 2 O 3 heterostructures
Patrick Vogt , Akhil Mauze , Feng Wu , Bastien Bonef
Applied Physics Express 11 ( 11) 115503
59
2018
H2O vapor assisted growth of β-Ga2O3 by MOCVD
Fikadu Alema , Yuewei Zhang , Akhil Mauze , Takeki Itoh
AIP Advances 10 ( 8) 085002
19
2020
Low temperature electron mobility exceeding 104 cm2/V s in MOCVD grown β-Ga2O3
Fikadu Alema , Yuewei Zhang , Andrei Osinsky , Nicholas Valente
APL Materials 7 ( 12) 121110
63
2019
Metal oxide catalyzed epitaxy (MOCATAXY) of β-Ga2O3 films in various orientations grown by plasma-assisted molecular beam epitaxy
Akhil Mauze , Yuewei Zhang , Takeki Itoh , Feng Wu
APL Materials 8 ( 2) 021104
11
2020
Modeling and analysis for thermal management in gallium oxide field-effect transistors
Chao Yuan , Yuewei Zhang , Robert Montgomery , Samuel Kim
Journal of Applied Physics 127 ( 15) 154502
41
2020
Solar blind Schottky photodiode based on an MOCVD-grown homoepitaxial β-Ga2O3 thin film
Fikadu Alema , Brian Hertog , Partha Mukhopadhyay , Yuewei Zhang
APL Materials 7 ( 2) 022527
63
2019
Sn doping of (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy
Akhil Mauze , Yuewei Zhang , Takeki Itoh , Elaheh Ahmadi
Applied Physics Letters 117 ( 22) 222102
1
2020