Crystal growth on (110) β-Ga2O3 via plasma-assisted molecular beam epitaxy

摘要: Epitaxial growth of β-Ga2O3 was performed on (110) substrate by plasma-assisted molecular beam epitaxy (PAMBE). Investigation (010) substrates has revealed that facets are the chevron consistent features in reflection high-energy electron diffraction (RHEED) studies, which indicates is a natural plane and exhibits atomically flat surface after Ga polishing. The rate dependence flux study suggests not reduced compared to (010). Atomic force microscopy (AFM) shows smooth morphology obtained growing substrates.