n-type dopants in (001) β-Ga2O3 grown on (001) β-Ga2O3 substrates by plasma-assisted molecular beam epitaxy
作者： Sang-Heon Han , Akhil Mauze , Elaheh Ahmadi , Tom Mates , Yuichi Oshima
关键词: Electron concentration 、 Morphology (linguistics) 、 Electron mobility 、 Doping 、 Range (particle radiation) 、 Materials science 、 Dopant 、 Molecular beam epitaxy 、 Plasma 、 Analytical chemistry
摘要: Ge and Sn as n-type dopants in (001) β-Ga 2 O 3 films were investigated using plasma-assisted molecular beam epitaxy. The Ge concentration showed a strong dependence on the …
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sci-hub.se 参考文章(25)
J. B. Varley, J. R. Weber, A. Janotti, C. G. Van de Walle, Oxygen vacancies and donor impurities in β-Ga2O3 Applied Physics Letters. ,vol. 97, pp. 142106- ,(2010) , 10.1063/1.3499306
Masahiro Orita, Hiromichi Ohta, Masahiro Hirano, Hideo Hosono, Deep-ultraviolet transparent conductive β-Ga2O3 thin films Applied Physics Letters. ,vol. 77, pp. 4166- 4168 ,(2000) , 10.1063/1.1330559
Encarnación G. Víllora, Kiyoshi Shimamura, Yukio Yoshikawa, Takekazu Ujiie, Kazuo Aoki, Electrical conductivity and carrier concentration control in β-Ga2O3 by Si doping Applied Physics Letters. ,vol. 92, pp. 202120- ,(2008) , 10.1063/1.2919728
Naoyuki Ueda, Hideo Hosono, Ryuta Waseda, Hiroshi Kawazoe, Synthesis and control of conductivity of ultraviolet transmitting β-Ga2O3 single crystals Applied Physics Letters. ,vol. 70, pp. 3561- 3563 ,(1997) , 10.1063/1.119233
Kohei Sasaki, Masataka Higashiwaki, Akito Kuramata, Takekazu Masui, Shigenobu Yamakoshi, MBE grown Ga2O3 and its power device applications Journal of Crystal Growth. ,vol. 378, pp. 591- 595 ,(2013) , 10.1016/J.JCRYSGRO.2013.02.015
C. B. Alcock, V. P. Itkin, M. K. Horrigan, Vapour Pressure Equations for the Metallic Elements: 298–2500K Canadian Metallurgical Quarterly. ,vol. 23, pp. 309- 313 ,(1984) , 10.1179/CMQ.1984.23.3.309
R. H. Lamoreaux, D. L. Hildenbrand, L. Brewer, High‐Temperature Vaporization Behavior of Oxides II. Oxides of Be, Mg, Ca, Sr, Ba, B, Al, Ga, In, Tl, Si, Ge, Sn, Pb, Zn, Cd, and Hg Journal of Physical and Chemical Reference Data. ,vol. 16, pp. 419- 443 ,(1987) , 10.1063/1.555799
Hideo Aida, Kengo Nishiguchi, Hidetoshi Takeda, Natsuko Aota, Kazuhiko Sunakawa, Yoichi Yaguchi, Growth of β-Ga2O3 Single Crystals by the Edge-Defined, Film Fed Growth Method Japanese Journal of Applied Physics. ,vol. 47, pp. 8506- 8509 ,(2008) , 10.1143/JJAP.47.8506
Masataka Higashiwaki, Kohei Sasaki, Akito Kuramata, Takekazu Masui, Shigenobu Yamakoshi, Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates Applied Physics Letters. ,vol. 100, pp. 013504- ,(2012) , 10.1063/1.3674287
Hironori Okumura, Masao Kita, Kohei Sasaki, Akito Kuramata, Masataka Higashiwaki, James S. Speck, Systematic investigation of the growth rate of β-Ga2O3(010) by plasma-assisted molecular beam epitaxy Applied Physics Express. ,vol. 7, pp. 095501- ,(2014) , 10.7567/APEX.7.095501