Donors and deep acceptors in β-Ga2O3
作者： Adam T. Neal , Shin Mou , Subrina Rafique , Hongping Zhao , Elaheh Ahmadi
DOI: 10.1063/1.5034474
关键词: Van der Pauw method 、 Silicon 、 Materials science 、 Analytical chemistry 、 Conductivity 、 Acceptor 、 Doping 、 Hall effect 、 Molecular beam epitaxy 、 Activation energy
摘要: We have studied the properties of Si, Ge shallow donors and Fe, Mg deep acceptors in β-Ga2O3 through temperature dependent van der Pauw and Hall effect measurements of samples grown by a variety of methods, including edge-defined film-fed, Czochralski, molecular beam epitaxy, and low pressure chemical vapor deposition. Through simultaneous, self-consistent fitting of the temperature dependent carrier density and mobility, we are able to accurately estimate the donor energy of Si and Ge to be 30 meV in β …
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