Anomalous hysteresis below 1 K in the transfer characteristics of MoS 2 field effect transistors

摘要: Recent studies on single- and multilayer molybdenum disulfide (MoS2) devices have revealed their promising characteristics as semiconductor devices. Understanding the transport properties at metal/MoS2 interfaces may be crucial for implementation. In this study, we measured electrical of field effect transistors (FETs) with a MoS2 channel from room temperature to 30 mK. A high on/off ratio (up 107 1 K) was observed all temperatures. Below K, first time an anomalously large hysteresis in transfer FET. We hypothesize that results slow injection electrons via quantum tunneling through Schottky barrier contacts. The size increased increase scan rate gate voltage, which is consistent possibility electrons.