Hysteresis of Transfer Characteristics in Field-Effect Transistors with a Molybdenum Disulfide Channel

作者: Yoshihiro Shimazu ,

DOI: 10.11605/J.PNRS.201701008

关键词: Field-effect transistorElectrical engineeringHysteresisCommunication channelTransfer (computing)Materials scienceMolybdenum disulfideOptoelectronics

摘要:

参考文章(23)
Subhamoy Ghatak, Arindam Ghosh, Trap-assisted space charge limited transport in short channel MoS2 transistor arXiv: Mesoscale and Nanoscale Physics. ,(2013) , 10.1063/1.4821185
Yoshihiro Shimazu, Kotaro Murata, Shunichi Toda, Anomalous hysteresis below 1 K in the transfer characteristics of MoS 2 field effect transistors Japanese Journal of Applied Physics. ,vol. 54, pp. 031201- ,(2015) , 10.7567/JJAP.54.031201
Saptarshi Das, Hong-Yan Chen, Ashish Verma Penumatcha, Joerg Appenzeller, High Performance Multilayer MoS2 Transistors with Scandium Contacts Nano Letters. ,vol. 13, pp. 100- 105 ,(2013) , 10.1021/NL303583V
Han Liu, Mengwei Si, Yexin Deng, Adam T. Neal, Yuchen Du, Sina Najmaei, Pulickel M. Ajayan, Jun Lou, Peide D. Ye, Switching mechanism in single-layer molybdenum disulfide transistors: an insight into current flow across Schottky barriers. ACS Nano. ,vol. 8, pp. 1031- 1038 ,(2014) , 10.1021/NN405916T
Igor Popov, Gotthard Seifert, David Tománek, Designing electrical contacts to MoS2 monolayers: a computational study. Physical Review Letters. ,vol. 108, pp. 156802- ,(2012) , 10.1103/PHYSREVLETT.108.156802
H G Ong, J W Cheah, X Zou, B Li, X H Cao, H Tantang, L-J Li, H Zhang, G C Han, J Wang, Origin of hysteresis in the transfer characteristic of carbon nanotube field effect transistor Journal of Physics D. ,vol. 44, pp. 285301- ,(2011) , 10.1088/0022-3727/44/28/285301
Kouji Taniguchi, Akiyo Matsumoto, Hidekazu Shimotani, Hidenori Takagi, Electric-field-induced superconductivity at 9.4 K in a layered transition metal disulphide MoS2 Applied Physics Letters. ,vol. 101, pp. 042603- ,(2012) , 10.1063/1.4740268
Qu Yue, Zhengzheng Shao, Shengli Chang, Jingbo Li, Adsorption of gas molecules on monolayer MoS2 and effect of applied electric field Nanoscale Research Letters. ,vol. 8, pp. 425- 425 ,(2013) , 10.1186/1556-276X-8-425
Sefaattin Tongay, Jian Zhou, Can Ataca, Jonathan Liu, Jeong Seuk Kang, Tyler S Matthews, Long You, Jingbo Li, Jeffrey C Grossman, Junqiao Wu, None, Broad-range modulation of light emission in two-dimensional semiconductors by molecular physisorption gating. Nano Letters. ,vol. 13, pp. 2831- 2836 ,(2013) , 10.1021/NL4011172
JT Ye, Yj J Zhang, R Akashi, Ms S Bahramy, R Arita, Y Iwasa, None, Superconducting Dome in a Gate-Tuned Band Insulator Science. ,vol. 338, pp. 1193- 1196 ,(2012) , 10.1126/SCIENCE.1228006