Trap-assisted space charge limited transport in short channel MoS2 transistor

摘要: We present temperature dependent $I-V$ measurements of short channel MoS$_2$ field effect devices at high source-drain bias. find that although the characteristics are Ohmic low bias, conduction becomes space charge limited $V_{DS}$ and existence an exponential distribution trap states was observed. The independent critical drain-source voltage ($V_c$) also determined. density quantitatively calculated from $V_c$. possible origin in these is discussed.