Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2
作者： Vinod K. Sangwan , Deep Jariwala , In Soo Kim , Kan-Sheng Chen , Tobin J. Marks
关键词:
摘要: … In this work, memristors were fabricated from monolayer MoS … Two Au electrodes on the MoS 2 define the memristor … We refer to such devices as intersecting-GB memristors. As-…
nature.com
arxiv.org
harvard.edu
elsevier.com
128.84.21.199参考文章(42)
Subhamoy Ghatak, Arindam Ghosh, Trap-assisted space charge limited transport in short channel MoS2 transistor arXiv: Mesoscale and Nanoscale Physics. ,(2013) , 10.1063/1.4821185
Arend M. van der Zande, Pinshane Y. Huang, Daniel A. Chenet, Timothy C. Berkelbach, YuMeng You, Gwan-Hyoung Lee, Tony F. Heinz, David R. Reichman, David A. Muller, James C. Hone, Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide Nature Materials. ,vol. 12, pp. 554- 561 ,(2013) , 10.1038/NMAT3633
Sina Najmaei, Matin Amani, Matthew L. Chin, Zheng Liu, A. Glen Birdwell, Terrance P. O’Regan, Pulickel M. Ajayan, Madan Dubey, Jun Lou, Electrical Transport Properties of Polycrystalline Monolayer Molybdenum Disulfide ACS Nano. ,vol. 8, pp. 7930- 7937 ,(2014) , 10.1021/NN501701A
Jinlan Wang, Pingheng Tan, Feng Miao, Daowei He, Zhenhua Ni, Qian Chen, Zheng Liang, Zilu Wang, Yan Lu, Xinran Wang, Wenhui Wang, Haiyan Nan, Strong Photoluminescence Enhancement of MoS2 through Defect Engineering and Oxygen Bonding ACS Nano. ,vol. 8, pp. 5738- 5745 ,(2014) , 10.1021/NN500532F
Mark C. Hersam, Vinod K. Sangwan, Lincoln J. Lauhon, Heather N. Arnold, Tobin J. Marks, Deep Jariwala, Low-frequency electronic noise in single-layer MoS2 transistors. Nano Letters. ,vol. 13, pp. 4351- 4355 ,(2013) , 10.1021/NL402150R
Amin Azizi, Xiaolong Zou, Peter Ercius, Zhuhua Zhang, Ana Laura Elías, Néstor Perea-López, Greg Stone, Mauricio Terrones, Boris I. Yakobson, Nasim Alem, Dislocation motion and grain boundary migration in two-dimensional tungsten disulphide Nature Communications. ,vol. 5, pp. 4867- 4867 ,(2014) , 10.1038/NCOMMS5867
J. Joshua Yang, Matthew D. Pickett, Xuema Li, Douglas A. A. Ohlberg, Duncan R. Stewart, R. Stanley Williams, Memristive switching mechanism for metal/oxide/metal nanodevices. Nature Nanotechnology. ,vol. 3, pp. 429- 433 ,(2008) , 10.1038/NNANO.2008.160
J. Joshua Yang, Dmitri B. Strukov, Duncan R. Stewart, Memristive devices for computing Nature Nanotechnology. ,vol. 8, pp. 13- 24 ,(2013) , 10.1038/NNANO.2012.240
S. H. Chang, J. S. Lee, S. C. Chae, S. B. Lee, C. Liu, B. Kahng, D.-W. Kim, T. W. Noh, Occurrence of Both Unipolar Memory and Threshold Resistance Switching in a NiO Film Physical Review Letters. ,vol. 102, pp. 026801- ,(2009) , 10.1103/PHYSREVLETT.102.026801
B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, A. Kis, Single-layer MoS2 transistors Nature Nanotechnology. ,vol. 6, pp. 147- 150 ,(2011) , 10.1038/NNANO.2010.279