Electric-field-induced superconductivity at 9.4 K in a layered transition metal disulphide MoS2
作者： Kouji Taniguchi , Akiyo Matsumoto , Hidekazu Shimotani , Hidenori Takagi
DOI: 10.1063/1.4740268
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摘要: Electro-static carrier doping was attempted in a layered transition metal disulphide MoS2 by constructing an electric double-layer transistor with ionic liquid. With the application of gate voltage VG higher than 3 V, metallic behavior observed channel. We found onset field-induced superconductivity field induced phase. A maximum TC ∼ 9.4 K observed, which could be those chemically doped bulk materials.
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