Control of Thermoelectric Properties of ZnO using Electric Double Layer
作者： Atsushi Asamitsu , Takenori Fujii , Ryohei Takayanagi
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摘要: We have successfully controlled thermoelectric properties of ZnO by changing carrier concentration using an electric double layer transistor (EDLT) which is a feld effect gated electrolyte solution. The resistivity and the thermopower decreased abruptly applying gate voltage larger than threshold ( 2V), indicating increase on surface. temperature dependence became metallic, characterized weak resistivity, when exceeded 2V. Corresponding to changed remarkably. thickness induced metallic was estimated be about 10nm from critical metal-insulator transition, power factor calculated ~8*10-5Wm-1K2. Although not as large bulk ceramics optimum doping condition, EDLT considered useful way optimize tuning concentration.
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