Optical properties of disordered carbon-based materials

摘要: Abstract This paper gives an overall picture of the optical properties various non-hydrogenated, hydrogenated and/or nitrogenated amorphous-carbon thin films. It shows how density electronic states (DOS) such materials is related to structural arrangement ions and their hybridisation, a crucial role being played by π electrons. As consequence peculiarities π-DOS, existence features trends dielectric constants, both in real imaginary parts, are demonstrated. The importance effects overlapping localisation on wavefunction addressed. far as nitrogen concerned, particular attention devoted discussing electrons belonging lone pairs amorphous carbons. Finally, inhomogeneous microstructure carbon-based considered. Such characteristic reflected threshold from localised percolating states, which not featured clear mobility edge corresponding well-defined change DOS shape, (homogeneous) silicon-based materials. Hence, estimation percolation turns out be easy problem. An model able estimate films analysis presented.