Universal conductance fluctuations in the magnetoresistance of submicron-size n+-GaAs wires and laterally confined n−-GaAs/(AlGa)As heterostructures
作者： R.P. Taylor , M.L. Leadbeater , G.P. Whittington , P.C. Main , L. Eaves
DOI: 10.1016/0039-6028(88)90664-4
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摘要: Abstract Universal conductance fluctuations (UCF) in the magnetoresistance of electron beam lithographed n+-GaAs wires length 10 μm and widths down to 90 nm are examined over temperature range from 2 110 K at magnetic fields up 11 T. The data interpreted terms a simple physical model based on Fourier transforms which indicates an intimate connection between UCF weak-localisation. Numerical values obtained for phase-breaking scattering rate contains significant temperature-independent contribution. In transverse laterally confined n−-GaAs/(AlGa)As heterostructures, both negative magnetoresistance, arising localisation interaction effects, vary as B cos θ where is angle 2DEG plane.
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