Resistance Drift of Aluminum Oxide Magnetic Tunnel Junction Devices
作者： Pon S Ku , Young Chung , None
DOI: 10.1109/RELPHY.2006.251258
关键词:
摘要: Reliability of AlOx magnetic tunnel junction (MTJ) devices is studied by investigating resistance drift behaviors under various stress conditions. Both reversible and permanent traps processes are observed during stress. Under unipolar pulsed stress, the reveals a strong dependence on operation frequency duty cycle, which believed to be attributed kinetics traps. Relative reliability performance MTJ analyzed from respects.
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