Ga Implantation in a MgO-based Magnetic Tunnel Junction With $\hbox{Co}_{60}\hbox{Fe}_{20}\hbox{B}_{20}$ Layers
作者： Anders Persson , Frida Riddar , Hugo Nguyen , Fredric Ericson , Greger Thornell
DOI: 10.1109/TMAG.2010.2089634
关键词:
摘要: A Co60Fe20B20-based tunneling magnetoresistance multilayer stack with an MgO barrier has been exposed to 30 keV Ga ions at doses corresponding ion etching and metal deposition in a focused beam (FIB) instrument, study the applicability of these processes magnetic tunnel junction (MTJ) fabrication. MTJs were fabricated irradiated investigate how exposures affected their coercivity magnetoresistance. Elemental depth profiles, acquired using electron spectroscopy for chemical analysis, showed that gathered around two Co60Fe20B20 layers. Correlated results measurements, this presence was found cause reduction increase coercivity. Quantitatively, dose 1014Ga+·cm-2 reduced by 60%, whereas 1015Ga+·cm-2 67% also increased 2 mT changed dipole coupling between sensing pinning layers 1.6 mT. The latter attributed imbalance synthetic antiferromagnetic structure, where stack's Ru spacer served as implantation barrier. lost 1016Ga+·cm-2. Annealing content but caused diffusion Cu from one stack. Apart observation explanation damages multilayer, work concludes on FIB prototyping MTJs.
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sci-hub.se 参考文章(29)
WM Kaminsky, GAC Jones, NK Patel, WE Booij, MG Blamire, SM Gardiner, YB Xu, JAC Bland, None, Patterning ferromagnetism in Ni80Fe20 films via Ga+ ion irradiation Applied Physics Letters. ,vol. 78, pp. 1589- 1591 ,(2001) , 10.1063/1.1351519
Lucille A. Giannuzzi, Fred A. Stevie, Introduction to focused ion beams : instrumentation, theory, techniques, and practice Introduction to Focused Ion Beams. pp. 193- ,(2005)
D. Ozkaya L, R. M. Langford, W. L. Chan, A. K. Petford-Long, Effect of Ga implantation on the magnetic properties of permalloy thin films Journal of Applied Physics. ,vol. 91, pp. 9937- 9942 ,(2002) , 10.1063/1.1477265
Gang Xiong, D. A. Allwood, M. D. Cooke, R. P. Cowburn, Magnetic nanoelements for magnetoelectronics made by focused-ion-beam milling Applied Physics Letters. ,vol. 79, pp. 3461- 3463 ,(2001) , 10.1063/1.1419032
Ll Balcells, Ll Abad, H Rojas, B Martínez, Material damage induced by nanofabrication processes in manganite thin films. Nanotechnology. ,vol. 19, pp. 135307- ,(2008) , 10.1088/0957-4484/19/13/135307
S.A. Rishton, Y. Lu, R.A. Altman, A.C. Marley, X.P. Bian, C. Jahnes, R. Viswanathan, G. Xiao, W.J. Gallagher, S.S.P. Parkin, Magnetic tunnel junctions fabricated at tenth-micron dimensions by electron beam lithography Microelectronic Engineering. ,vol. 35, pp. 249- 252 ,(1997) , 10.1016/S0167-9317(96)00107-4
A. Fukushima, H. Kubota, S. Yuasa, T. Takahachi, S. Kadoriku, K. Miyake, Lift-off process for deep-submicron-size junctions using supercritical CO2 Journal of Magnetism and Magnetic Materials. ,vol. 310, ,(2007) , 10.1016/J.JMMM.2006.10.927
C.D. Wagner, Sensitivity factors for XPS analysis of surface atoms Journal of Electron Spectroscopy and Related Phenomena. ,vol. 32, pp. 99- 102 ,(1983) , 10.1016/0368-2048(83)85087-7
Kuniaki Sugiura, Shigeki Takahashi, Minoru Amano, Takeshi Kajiyama, Masayoshi Iwayama, Yoshiaki Asao, Naoharu Shimomura, Tatsuya Kishi, Sumio Ikegawa, Hiroaki Yoda, Akihiro Nitayama, Ion Beam Etching Technology for High-Density Spin Transfer Torque Magnetic Random Access Memory Japanese Journal of Applied Physics. ,vol. 48, ,(2009) , 10.1143/JJAP.48.08HD02
C.-M. Park, J. A. Bain, T. W. Clinton, P. A. A. van der Heijden, T. J. Klemmer, Measurement of Ga implantation profiles in the sidewall and bottom of focused-ion-beam-etched structures Applied Physics Letters. ,vol. 84, pp. 3331- 3333 ,(2004) , 10.1063/1.1715142