Impurities and metalorganic chemical-vapor deposition growth of mercury cadmium telluride

摘要: The doping behavior of indium and iodine have been investigated for mercury cadmium telluride (MCT, Hg1−xCdxTe ) layers deposited by the interdiffused multilayer process procedure at 400 °C using diethyl tellurium dimethyl cadmium. Trimethyl solid were used as dopant sources. Both elements exhibited donor under conditions employed. Secondary ion mass spectrometry profile analysis was to demonstrate that required a relatively long period during growth attain an equilibrium concentration in layer; addition significant reactor system memory observed allied fast diffusion rate. Iodine showed encouraging properties low levels, chemical good agreement with free level from Hall measurements. advantage applicability each three procedures this work are discussed together comments on residual impurity content elec...