Assessment of doped CdxHg1-xTe structures using bevelled sections
作者： I G Gale , J B Clegg , S Mugford , C D Maxey , S Barton
DOI: 10.1088/0268-1242/8/1S/061
关键词:
摘要: Doped homo- and heterostructures of CdxHg1-xTe (CMT) are required for some types new-generation devices. These structures have been grown by metal organic vapour phase epitaxy (MOVPE) at approximately 360 degrees C onto both CdTe GaAs (buffered with CdTe) substrates. The were produced using acceptor donor doping arsenic iodine respectively, the junctions formed following annealing in mercury to eliminate vacancies. This paper summarizes progress characterizing these terms x electrical behaviour.
dissem.in 参考文章(14)
Joseph I. Goldstein, Dale E. Newbury, Joseph R. Michael, Nicholas W.M. Ritchie, John Henry J. Scott, David C. Joy, Scanning Electron Microscopy and X-Ray Microanalysis Transactions of the American Microscopical Society. ,vol. 102, pp. 59- ,(2018) , 10.1007/978-1-4939-6676-9
C D Maxey, P A C Whiffin, B C Easton, MOVPE growth and characterization of doped CdxHg1-xTe structures Semiconductor Science and Technology. ,vol. 6, ,(1991) , 10.1088/0268-1242/6/12C/006
C.D. Maxey, P. Capper, P.A.C. Whiffin, B.C. Easton, I. Gale, J.B. Clegg, A. Harker, C.L. Jones, Extrinsic doping at low concentrations for CDxHg1-xTe layers grown by MOVPE Journal of Crystal Growth. ,vol. 101, pp. 300- 304 ,(1990) , 10.1016/0022-0248(90)90986-U
J. M. Walls, D. D. Hall, D. E. Sykes, Composition–Depth profiling and interface analysis of surface coatings using ball cratering and the scanning auger microprobe† Surface and Interface Analysis. ,vol. 1, pp. 204- 210 ,(1979) , 10.1002/SIA.740010607
C.L. Jones, P. Capper, M.J.T. Quelch, M. Brown, The properties of gold in Bridgman grown CdxHg1-xTe Journal of Crystal Growth. ,vol. 64, pp. 417- 432 ,(1983) , 10.1016/0022-0248(83)90325-1
P. Capper, C.D. Maxey, P.A.C. Whiffin, B.C. Easton, Incorporation and activation of group V elements in MOVPE-grown CdxHg1-xTe Journal of Crystal Growth. ,vol. 97, pp. 833- 844 ,(1989) , 10.1016/0022-0248(89)90585-X
T. M. Moore, H. F. Schaake, EBIC characterization of electrically active defects in (Hg,Cd)Te Journal of Vacuum Science and Technology. ,vol. 1, pp. 1666- 1668 ,(1983) , 10.1116/1.572252
B. C. Easton, Impurities and metalorganic chemical-vapor deposition growth of mercury cadmium telluride Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 9, pp. 1682- 1686 ,(1991) , 10.1116/1.585399
D. K. Skinner, The application of ion beam bevel sectioning and post-sputter etch treatment in Auger crater-edge profiling Surface and Interface Analysis. ,vol. 14, pp. 567- 571 ,(1989) , 10.1002/SIA.740140913
P.A.C. Whiffin, B.C. Easton, P. Capper, C.D. Maxey, Computer controlled deposition of cmt heterostructures by Movpe Journal of Crystal Growth. ,vol. 79, pp. 935- 939 ,(1986) , 10.1016/0022-0248(86)90575-0