Process for breaking silicide stringers extending between silicide areas of different active regions

摘要: A process for breaking silicide stringers extending between regions of different active on a semiconductor device is provided. Consistent with an exemplary fabrication process, two adjacent silicon are formed substrate and metal layer over the regions. The then reacted to form each region. This reaction also forms from Finally, at least part stringer removed. During formation one may be which bridges other In such circumstances, removal may, example, break electrically decouple gate electrode adjacet source/drain As another nearby polysilicon lines.