Use of a capping layer to attain low titanium-silicide sheet resistance and uniform silicide thickness for sub-micron silicon and polysilicon lines

作者: Pushkar P. Apte , Ajit P. Paranjpe

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摘要: A titanium-silicide process using a capping layer to reduce the silicide sheet resistance. of titanium (20) is deposited. react (22) may then be deposited prevent contaminants from entering (20)during subsequent step. The reacted form (32). removed and an anneal (36) (32) during Then, performed accomplish transformation lower resistivity phase silicide. An advantage invention providing having reduced resistance for narrow polysilicon lines.