摘要: The present invention provides a multiphase, ultra low k film which exhibits improved elastic modulus and hardness as well various methods for forming the same. dielectric includes atoms of Si, C, O H, has constant about 2.4 or less, nanosized pores voids, an 5 greater 0.7 greater. A preferred 2.2 3 0.3 is prepared by plasma enhanced chemical vapor deposition in one following alternatives utilized: at least precursor gas comprising siloxane molecules containing three Si—O bonds; reactive groups that are sensitive to e-beam radiation. Electronic structures including also disclosed.
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