Approach to provide high external voltage for flash memory erase
作者： Fu-Chang Hsu , Mike Hsinyih Chen , Peter Wung Lee
DOI:
关键词:
摘要: In this invention external high voltages are connected to a chip containing flash memory that selected cells be erased. Internal pump circuits contained on the turned off while used. The voltages, negative voltage and positive voltage, gates sources respectively of erased by control module. used during manufacture program/erase operations perform erase function efficiently. internal after being assembled circuit board user. Two level shifter disclosed form part apply provide select deselect for erasure.
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