Flash EEPROM with on-chip erase source voltage generator
作者： Marco Dallabora , Luigi Bettini , Corrado Villa
DOI:
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摘要: A Flash EEPROM having negative voltage generator means for generating a to be supplied control gate electrodes of memory cells erasing the cells. The also has first positive voltage, independent from an external power supply EEPROM, source regions during erasing.
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