Strained Si/SiGe layers on insulator
作者： Khalid EzzEldin Ismail , Jack Oon Chu
DOI:
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摘要: An SOI substrate and method for forming is described incorporating the steps of strained layers Si and/or SiGe on a first substrate, layer O2 over layers, bonding second having an insulating its upper surface to top above removing substrate. The invention overcomes problem substrates.
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