RF plasma chemical vapor deposition of SiN x :H films
作者： O. I. Semenova , S. F. Devyatova
DOI: 10.1134/S0020168512070151
关键词:
摘要: This paper reports on the growth of hydrogenated silicon nitride films by plasma enhanced chemical vapor deposition in temperature range 100–200°C. We examine effect parameters kinetics, composition, and properties describe examples use such fabrication uncooled IR photodetectors, antireflection coatings solar cells, three-dimensional microsystems.
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