作者: Taizo Kinoshita , Minoru Nagata , Kiichi Yamashita , Hirotoshi Tanaka , Nobuo Kotera
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摘要: This invention relates to a threshold voltage detection circuit for detecting the of field effect transistors (FETs) and semiconductor capable stable operation irrespective fluctuation by utilizing this circuit. The source-drain path first FET is connected in series with that second having substantially same as conductances these FETs are set predetermined ratio generate drop associated FET. can be used level-shifting. output connection applied gate constant current drain thus voltage.