作者: O. V. Tsisar , L. V. Piskach , O. V. Parasyuk , L. P. Marushko , I. D. Olekseyuk
DOI: 10.1007/S10854-017-7854-X
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摘要: We have shown a possibility to apply Tl2S–Ga2S3–GeS2 glasses as an effective photoinduced third harmonic generation materials. As photoinducing beam, the 200 mW green laser at 532 nm was used. The 15 ns pulsed Nd:YAG with power density tuned up 800 MW/cm2 Glass-formation region in quasi-ternary system investigated by quenching molten alloys from 1300 K. minimum concentration of glass-forming agent GeS2 is 30 mol%. Characteristic thermal parameters and optical absorption spectra were investigated. variations bandgap energy determined. It crucial that beam excited bulk materials output signal observed for 355 nm formed near surface.