Large value capacitor

摘要: Disclosed is a semiconductor capacitor which utilizes the volume of substrate in it formed to create increased surface area and thereby provide capacitance. The by forming selectively spaced grooves orientation dependent etches utilizing sidewalls as surface. Groove depth limited predetermined value etching time, geometrical constraints, or etch stops. This provides for precise control capacitance values on batch commercial basis. Increases up at least 100-fold compared flat structure possible. A thin layer dielectric over area, thereafter conducting capacitor. An active junction P-N may also be formed.