An efficient wide range photodetector fabricated using a bilayer Bi2S3/SnS heterojunction thin film

作者: Farid Jamali-Sheini , Mohsen Cheraghizade , Ladan Heshmatynezhad , None

DOI: 10.1088/1361-6641/AB0723

关键词:

摘要: … Finally, the 299 cm −1 Raman peak is due to the B 2g mode of SnS [23]. The Raman … Figures 6(g)–(i) show the J–V plots of the SnS, Bi 2 S 3 , and Bi 2 S 3 /SnS thin films under darkness …

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