作者: K. H. Li , Y. F. Cheung , W. S. Cheung , H. W. Choi
DOI: 10.1063/1.4934840
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摘要: The optical crosstalk phenomenon in GaN micro-pixel light-emitting diodes (LED) has been investigated by confocal microscopy. Depth-resolved confocal emission images indicate light channeling along the GaN and sapphire layers as the source of crosstalk. Thin-film micro-pixel devices are proposed, whereby the light-trapping sapphire layers are removed by laser lift-off. Optical crosstalk is significantly reduced but not eliminated due to the remaining GaN layer. Another design involving micro-pixels which are completely isolated is …