Micro-structured light emission from planar InGaN light-emitting diodes

摘要: Investigation of the surface modification p-type layer in GaN light-emitting diodes (LEDs) by exposure to a trifluoromethane plasma is reported. It found that treatment reduces conductivity p-GaN several orders magnitude, and when applied at room-temperature through patterned mask, localized current channels into active region p–i–n device are created. This provides novel approach laterally modulate light emission from an LED over essentially planar areas. technique allows projection high-resolution images non-pixelated devices, example application maskless pattern transfer with sub-micron features photoresist demonstrated.