Formation of Selective High Barrier Region by Inductively Coupled Plasma Treatment on GaN-Based Light-Emitting Diodes

摘要: By inductively coupled plasma (ICP) etching, a selective high barrier region (SHBR) was fabricated below the p-pad metal electrode for modifying injection current distribution on p-type GaN of GaN-based light-emitting diodes (LEDs). Through analysis noise power spectra, samples with ICP etching treatment have excess nitrogen vacancies at selectively etched surface GaN; thus, they lower hole concentration than as-grown sample, resulting in larger height carrier transport. With this SHBR, light-output LED chip measured 20 mA significantly increased by 12% as compared that conventional chip. The increase could be attributed to relative reduction optical absorption under and higher density effectively injected into active layer SHBR structure.