Effect of the Electrode Shape on Properties of GaN-Based LED Chips

作者: Hai Kuang , Shi An He , Ying Luo , Xiang Qing Zhang , Zhi Hua Xiong

DOI: 10.4028/WWW.SCIENTIFIC.NET/AMR.884-885.283

关键词:

摘要: Before cutting into a single chip, we have tested LED chip with different electrode that is produced under the same condition. With drive current changes, comparing intensity of light emission and operating voltage about two samples. The conclusion shows shape makes influence on performance LED, circular angle better. result demonstrates better structure can improve its performance.

参考文章(7)
Ting-Wei Kuo, Shi-Xiong Lin, Pin-Kun Hung, Kwok-Keung Chong, Chen-I Hung, Mau-Phon Houng, Formation of Selective High Barrier Region by Inductively Coupled Plasma Treatment on GaN-Based Light-Emitting Diodes Japanese Journal of Applied Physics. ,vol. 49, pp. 116504- ,(2010) , 10.1143/JJAP.49.116504
Chi-Kang Li, Yuh-Renn Wu, Study on the Current Spreading Effect and Light Extraction Enhancement of Vertical GaN/InGaN LEDs IEEE Transactions on Electron Devices. ,vol. 59, pp. 400- 407 ,(2012) , 10.1109/TED.2011.2176132
Volodymyr K. Malyutenko, Sergey S. Bolgov, Andrey N. Tykhonov, Research on Electrical Efficiency Degradation Influenced by Current Crowding in Vertical Blue InGaN-on-SiC Light-Emitting Diodes IEEE Photonics Technology Letters. ,vol. 24, pp. 1124- 1126 ,(2012) , 10.1109/LPT.2012.2196426
Zi-Hui Zhang, Swee Tiam Tan, Wei Liu, Zhengang Ju, Ke Zheng, Zabu Kyaw, Yun Ji, Namig Hasanov, Xiao Wei Sun, Hilmi Volkan Demir, Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer Optics Express. ,vol. 21, pp. 4958- 4969 ,(2013) , 10.1364/OE.21.004958
Fatih Akyol, Sriram Krishnamoorthy, Siddharth Rajan, Tunneling-based carrier regeneration in cascaded GaN light emitting diodes to overcome efficiency droop Applied Physics Letters. ,vol. 103, pp. 081107- ,(2013) , 10.1063/1.4819737
Sungmin Hwang, Jongin Shim, A Method for Current Spreading Analysis and Electrode Pattern Design in Light-Emitting Diodes IEEE Transactions on Electron Devices. ,vol. 55, pp. 1123- 1128 ,(2008) , 10.1109/TED.2008.918414