Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer
作者： Zi-Hui Zhang , Swee Tiam Tan , Wei Liu , Zhengang Ju , Ke Zheng
DOI: 10.1364/OE.21.004958
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摘要: … On the other hand, the diffusion length (L D ) of holes in the n-GaN can be obtained by using L D = D p τ p = k T μ p / e τ p (where D p is the diffusion constant of holes, correlated with µ …
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