Planar micro- and nano-patterning of GaN light-emitting diodes: Guidelines and limitations

摘要: The emission area of GaN light-emitting diodes can be patterned by etch-free current aperturing methods which exploit the thin and highly resistive nature p-doped layer in these devices. Here, fundamental underlying electrical optical aspects high-resolution are investigated theoretically. most critical parameter for possible resolution is thickness d p-GaN layer, but interplay resistivity junction characteristics also important. A spatial 1.59d principle achieved, corresponding to about 300 nm typical epitaxial structures. Furthermore, from such a small emitter will spread 600 nm while propagating through p-GaN. Both values reduced reducing d.