Enhancement of electroluminescence in GaN-based light-emitting diodes using an efficient current blocking layer
作者： Ho Won Jang , Jong-Lam Lee
DOI: 10.1116/1.2083931
关键词:
摘要: Enhancement of electroluminescence in GaN-based light-emitting diodes (LEDs) was achieved using an efficient current blocking layer formed by postannealing. When a LED chip with Ni∕Au pad on transparent p contact annealed at 500 °C, the increased 55%. The specific resistivity metal below significantly due to indiffusion Au and Ni atoms from interfacial region. As result, could be pad, enhancing light output decreasing reverse leakage chip. This result suggests that further increase extraction efficiency LEDs can easily obtained
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