Magnetic memory device and method of manufacturing the same
作者： Whankyun Kim , Ki Woong Kim , Sang Hwan Park , Kwangseok Kim , JoonMyoung Lee
DOI:
关键词:
摘要: A magnetic memory device includes a reference pattern having magnetization direction fixed in one direction, free changeable and tunnel barrier disposed between the patterns. The has first surface being contact with second opposite to surface. further sub-oxide on of pattern, metal boride pattern. directions patterns are substantially perpendicular
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