Magnetic memory devices
作者： Eunsun Noh , Byoungjae Bae , Jongchul Park , Shin-Jae Kang , Kyung Rae Byun
DOI:
关键词:
摘要: Magnetic memory devices include a plurality of first magnetic patterns on substrate so as to be spaced apart from each other, insulating pattern between the define patterns, and tunnel barrier layer covering pattern. The includes element, element is same second constituting patterns.
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