Heavy ions irradiated crystal GaAs as an active non-linear matrix for the generation of THz radiation
作者： M.M. Nazarov , A.V. Shepelev , A.P. Shkurinov , V.A. Skuratov , D.L. Zagorski
DOI: 10.1016/J.RADMEAS.2008.04.067
关键词:
摘要: Abstract The electromagnetic irradiation of Terahertz (THz) frequency could be obtained by means optical rectification, using the media with non-linear properties. We demonstrated that semiconductor crystal (GaAs) heavy-ion induced defects (irradiation Kr ions energy 90 MeV up to a fluence 10 cm - 2 ) used for this process. Laser ( λ = 795 nm pulse signal τ 100 fs was transformed into THz range difference generation. spectrum waveform investigated and high efficiency process in 1–3 THz shown. calculation susceptibility dependence parameter on carrier concentration temperature.
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