Structural and electrical properties of In2O3 :Sn films prepared by radio-frequency sputtering
作者： M. Ghebre , M. Sulkowski , D. Mergel , M. Schenkel
DOI: 10.1016/S0040-6090(01)01013-6
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摘要: A series of In 2 O 3 :Sn (ITO) films has been prepared by radio-frequency sputtering at 380C with the oxygen admixture to the sputter gas being varied systematically. At a low oxygen …
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