Semiconductor chip for optoelectronics

作者: Andreas Ploessl , Stefan Illek , Ralph Wirth , Klaus Streubel , Walter Wegletter

DOI:

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摘要: An optoelectronic semiconductor chip has an active layer containing a photon-emitting zone. The is attached to carrier member at bonding side of the layer. least one recess therein with cross-sectional area that decreases increasing depth into said proceeding from side.

参考文章(54)
Magnus George Craford, Paul T. Bailey, Integrated semiconductor light-emitting display array ,(1975)
Robert M. Fletcher, Chihping Kuo, Jiann Yu, Kuo-Hsin Huang, Timothy D. Osentowski, Light-emitting diode with a thick transparent layer ,(1992)
Daniel Alexander Steigerwald, Jerome Chandra Bhat, Michael Joseph Ludowise, Semiconductor LED flip-chip having low refractive index underfill ,(2002)
Yoshitaka Misugi-Manshon Go Tomomura, Masahiko Kitagawa, Electroluminescent device of compound semiconductor ,(1989)
Brian Thibeault, Steven Denbaars, Micro-led arrays with enhanced light extraction ,(2000)
Ernst Nirschl, Karl-Heinz Schlereth, Olaf Schoenfeld, Gerald Neumann, Norbert Stath, Siegmar Kugler, Raimund Oberschmid, Georg Bogner, High radiance LED chip and a method for producing same ,(2001)
M. R. Krames, M. Ochiai-Holcomb, G. E. Höfler, C. Carter-Coman, E. I. Chen, I.-H. Tan, P. Grillot, N. F. Gardner, H. C. Chui, J.-W. Huang, S. A. Stockman, F. A. Kish, M. G. Craford, T. S. Tan, C. P. Kocot, M. Hueschen, J. Posselt, B. Loh, G. Sasser, D. Collins, High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency Applied Physics Letters. ,vol. 75, pp. 2365- 2367 ,(1999) , 10.1063/1.125016
William A. Parkyn, John M. Popovich, Ring-lens system for efficient beam formation ,(1997)
Tsunehiro Unno, Taichiro Konno, Light emitting diode and process for fabricating the same ,(1994)