Sign change of skew scattering induced anomalous Hall conductivity in epitaxial NiCo(002) films: band filling effect
作者： W J Fan , L Ma , S M Zhou
DOI: 10.1088/0022-3727/48/19/195004
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摘要: Tuning effects of the band filling and impurity distribution on anomalous Hall effect are demonstrated in epitaxial face centered cubic NixCo1?x (002) films through alloy composition. The resistivity obeys conventional scaling law, i.e. . It is interesting to find that addition scattering independent parameter b, skew a also changes sign from negative positive near same Ni atomic concentration (x?=?0.80) due effects. magnitude shows similar variation trend for residual because distribution. This work might provide clue design fabrication high sensitivity sensor.
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