作者: C.J. Peng , S.B. Krupanidhi
DOI: 10.1016/0040-6090(92)90738-W
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摘要: Abstract Lead germanate (Pb 5 Ge 3 O 11 ) thin films were prepared by the excimer laser ablation technique. The structure of was characterized in correlation with beam energy density, substrate temperature, post-annealing oxygen pressure and nature substrates. c axis preferred oriented can be obtained at a J cm −2 density an partial × 10 −4 Torr on platinum-coated silicon substrates, while 2 enough during deposition sapphire Composition analysis indicated that stoichiometric close to target composition. Films found ferroelectric room temperature terms remanent polarization about 2.5 μ C coercive field 55 kV −1 . preperred also exhibited clear onset ferro-paraelectric phase transition 175 °C which is single crystal.