Magnetotransport in the insulating regime of Mn-doped GaAs
作者： Louis-François Arsenault , B. Movaghar , P. Desjardins , A. Yelon
DOI: 10.1103/PHYSREVB.78.075202
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摘要: We consider transport in the insulating regime of GaMnAs. calculate resistance, magnetoresitance and Hall effect, assuming that Fermi energy is region localized states above valence band mobility edge. Both hopping activated contributions are included. The anomalous current from very different has extrinsic (skew) intrinsic (Luttinger) contributions. Comparison with experiment allows us to assess degree which contribution determine each three coefficients a particular temperature range. There strong indications state GaMnAs controlled primarily by extended state, edge, rather than variable range hopping, as reported literature.
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