作者: H. Meinel , B. Rembold
DOI: 10.1109/MWSYM.1979.1124033
关键词:
摘要: New diode-controlled mm-wave attenuators and switches using fin-line technique are presented. Design considerations measurements show, that ultra broadband devices (18-40 GHz; attenuation adjustable from 1.5 to 25 dB) as well narrow band circuits at higher frequencies (91-93 attenuations 2.9 20 can be realized PIN-diodes. For high speed switching in the subnanosecond range Schottky-Barrier-diodes taken (31-33 switchable 2.5 dB).