New Millimeter-Wave Fin-Line Attenuators and Switches

作者: H. Meinel , B. Rembold

DOI: 10.1109/MWSYM.1979.1124033

关键词:

摘要: New diode-controlled mm-wave attenuators and switches using fin-line technique are presented. Design considerations measurements show, that ultra broadband devices (18-40 GHz; attenuation adjustable from 1.5 to 25 dB) as well narrow band circuits at higher frequencies (91-93 attenuations 2.9 20 can be realized PIN-diodes. For high speed switching in the subnanosecond range Schottky-Barrier-diodes taken (31-33 switchable 2.5 dB).

参考文章(4)
H. Hofmann, H. Meinel, B. Adelseck, New Integrated mm-Wave Components Using Fin-Lines MTT-S International Microwave Symposium Digest. pp. 21- 23 ,(1978) , 10.1109/MWSYM.1978.1123775
Abdel Megid Kamal Saad, Klaus Schunemann, Field Desoription for Multi-Slot Fin-Line Struotures 8th European Microwave Conference, 1978. pp. 101- 105 ,(1978) , 10.1109/EUMA.1978.332521
H. Hofmann, Calculation of Quasi-Planar Lines for mm-Wave Application international microwave symposium. pp. 381- 384 ,(1977) , 10.1109/MWSYM.1977.1124464